apt60gl120ju3 apt60gl120ju3 ? rev 1 may, 2010 www.microsemi.com 1-5 application ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? isotop ? package (sot-227) ? very low stray inductance ? high level of integration benefits ? low conduction losses ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 80 i c continuous collector current t c = 80c 60 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 280 w rbsoa reverse bias safe operating area t j = 150c 100a @ 1100v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com c a e g isotop ? v ces = 1200v i c = 60a @ tc = 80c isotop ? buck chopper trench + field stop igbt4 power module a c g e
apt60gl120ju3 apt60gl120ju3 ? rev 1 may, 2010 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.85 2.25 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 50a t j = 150c 2.25 v v ge(th) gate threshold voltage v ge = v ce , i c = 1.6ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 2770 c oes output capacitance 205 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 160 pf q g gate charge v ge = 15v ; v ce =600v i c =50a 0.38 c t d(on) turn-on delay time 130 t r rise time 20 t d(off) turn-off delay time 300 t f fall time inductive switching (25c) v ge = 15v v ce = 600v i c = 50a r g = 8.2 45 ns t d(on) turn-on delay time 150 t r rise time 35 t d(off) turn-off delay time 350 t f fall time inductive switching (150c) v ge = 15v v ce = 600v i c = 50a r g = 8.2 80 ns t j = 25c 3.8 e on turn-on switching energy t j = 150c 5.5 mj t j = 25c 2.5 e off turn-off switching energy v ge = 15v v ce = 600v i c = 50a r g = 8.2 t j = 150c 4.5 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 200 a chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 30 a i f = 30a 2.6 3.1 i f = 60a 3.2 v f diode forward voltage i f = 30a t j = 125c 1.8 v t j = 25c 300 t rr reverse recovery time t j = 125c 380 ns t j = 25c 360 q rr reverse recovery charge i f = 30a v r = 800v di/dt =200a/s t j = 125c 1700 nc
apt60gl120ju3 apt60gl120ju3 ? rev 1 may, 2010 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.53 r thjc junction to case thermal resistance diode 1.2 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 175 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. isotop? is a registered trademark of st microelectronics nv emitter gate collector anode
apt60gl120ju3 apt60gl120ju3 ? rev 1 may, 2010 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =150c 0 20 40 60 80 100 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 20 40 60 80 100 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 20 40 60 80 100 5 6 7 8 9 10 11 12 13 v ge (v) i c (a) energy losses vs collector current eon eoff 0 4 8 12 16 20 0 20 40 60 80 100 i c (a) e (mj) v ce = 600v v ge = 15v r g = 8.2 ? t j = 150c eon eoff 2 4 6 8 10 12 0 10203040 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 50a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 20 40 60 80 100 120 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =150c r g =8.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
apt60gl120ju3 apt60gl120ju3 ? rev 1 may, 2010 www.microsemi.com 5-5 hard switching zcs zvs 0 25 50 75 100 125 10 20 30 40 50 60 70 80 90 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =8.2 ? t j =150c tc=75c operating frequency vs collector current forward characteristic of diode t j =25c t j =125c 0 20 40 60 80 0 0.5 1 1.5 2 2.5 3 3.5 4 v f , anode to cathode voltage (v) i f , forward current (a) maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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